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| BPX 90 BPX 90 F Silizium-Fotodiode Silicon Photodiode BPX 90 BPX 90 F Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm (BPX 90) und bei 950 nm (BPX 90 F) q Hohe Fotoempfindlichkeit q DIL-Plastikbauform mit hoher Packungsdichte Anwendungen q Industrieelektronik q "Messen/Steuern/Regeln" Features q Especially suitable for applications from 400 nm to 1100 nm (BPX 90) and of 950 nm (BPX 90 F) q High photosensitivity q DIL plastic package with high packing density Applications q Industrial electronics q For control and drive circuits Typ Type BPX 90 BPX 90 F Bestellnummer Ordering Code Q62702-P47 Q62702-P928 Semiconductor Group 1 01.97 feof6014 feo06014 BPX 90 BPX 90 F Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 80 230 Einheit Unit C C Top; Tstg TS VR Ptot 32 100 V mW Kennwerte TA = 25 C Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K, VR = 5 V, = 950 nm, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Symbol Symbol BPX 90 Wert Value BPX 90 F Einheit Unit S S S max 45 ( 32) - 830 - 26 ( 16) 950 nA/Ix A nm 400 ... 1150 800 ... 1150 nm A LxB LxW H 5.5 1.75 x 3.15 5.5 1.75 x 3.15 mm2 mm x mm 0.5 0.5 mm Semiconductor Group 2 BPX 90 BPX 90 F Kennwerte TA = 25 C Characteristics (cont'd) Bezeichnung Description Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 950 nm Spectral sensitivity Quantenausbeute, = 950 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 30 A Durchlaspannung, IF = 80 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Symbol Symbol BPX 90 60 5 ( 180) 0.48 0.62 Wert Value BPX 90 F 60 5 ( 180) 0.48 0.62 Grad deg. nA A/W Electrons Photon Einheit Unit IR S VO VO 450 ( 380) - - 400 ( 340) mV mV ISC ISC t r, t f 45 - 1.3 - 13 1.3 A A s VF C0 1.3 430 1.3 430 V pF Semiconductor Group 3 BPX 90 BPX 90 F Kennwerte TA = 25 C Characteristics (cont'd) Bezeichnung Description Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A = 950 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 950 nm Nachweisgrenze, VR = 10 V, = 950 nm Detection limit Symbol Symbol BPX 90 Wert Value BPX 90 F - 2.6 mV/K - 2.6 Einheit Unit TCV TCI TCI NEP 0.18 - 8 x 10- 14 - 0.2 8 x 10- 14 %/K %/K W Hz cm * Hz W D* 2.9 x 1012 2.9 x 1012 Directional characteristics Srel = f () Semiconductor Group 4 BPX 90 BPX 90 F Relative spectral sensitivity BPX 90 Srel = f () Relative spectral sensitivity BPX 90 F Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit volt. BPX 90 VO = f (Ev) Photocurrent IP = f (Ee), VR = 5 V Open-circuit-volt. BPX 90 F VO= f (Ee) Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 10 V, E = 0 Semiconductor Group 5 |
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